| PART |
Description |
Maker |
| INA-32063 INA-32063-BLK INA-32063-TR2 INA-32063-TR |
3.0千兆赫宽带硅射频放大器（3.0千兆赫宽频带硅射频集成电路放大器
3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 宽频带硅射频集成电路放大
3V Fixed Gain. Wideband Amplifier
|
Agilent(Hewlett-Packard)
|
| ADG918BRMZ ADG919BCPZ-REEL7 ADG91808 EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches 0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.25 dB INSERTION LOSS
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
|
Analog Devices, Inc.
|
| ADG936BCP-R-500RL7 ADG936BCP-R-REEL ADG936BRU-REEL |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65 V to 2.75 V Dual SPDT
|
Analog Devices
|
| PE6815 PE6815-16 |
2 Watts Low Power Precision WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|
| PH1214-40M |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 401.20 - 1 .40千兆赫，150毫秒脉冲0％的
|
Ecliptek, Corp.
MACOM[Tyco Electronics]
|
| TGA4832-15 |
DC 35 GHz Wideband Amplifier
|
TriQuint Semiconductor
|
| HMC334LP4 HMC334LP4E HMC334LP410 |
SiGe WIDEBAND DOWNCONVERTER, 0.6 - 2.7 GHz
|
Hittite Microwave Corporation
|
| BFG741 |
NPN 7 GHz WIDEBAND TRANSISTOR
|
List of Unclassifed Manufacturers
ETC
|
| BFG94-2015 BFG94-15 |
NPN 6 GHz wideband transistor
|
Quanzhou Jinmei Electro...
|
